Course Code: B53001H
Course Name: SemiconductorMaterials
Credits: 1.5
Level: Undergraduate
Pre-requisite: College Physics, Solid State Physics, Semiconductor Physics, Quantum Mechanics, Preparation and Characterization of Materials Technology
Lecture Time: 30 hours
Instructors:
Course Description
This course is an elective course for undergraduates of material science. This course provides the necessary basic knowledge for the students who are engaged in the research and technology of semiconductor materials, semiconductor devices, inorganic functional materials, nano materials, etc. This course is designed for undergraduate students majoring in materials science, information technology, electronic technology, physics and chemistry. Through this course, students can be able to understand and master the basic knowledge of physical and chemical properties of traditional and advanced semiconductor materials, preparation methods and applications. In addition, this course provides useful guidance for a variety of advanced technology applications such as the design, fabrication and development of application system for new semiconductor optoelectronic devices, power electronic devices, solar cell devices, detectors and sensors. The contents include: basic physical knowledge of semiconductor materials and device, basic knowledge of semiconductor material preparation technology, basic knowledge of the first generation of element semiconductor materials and device applications, basic knowledge of the second generation of III-V compound semiconductor materials and devices, basic knowledge of application of third generation semiconductor materials and devices,basic knowledge of the third generation wide band gap semiconductor materials and device applications, basic knowledge of application to the forefront of two-dimensional atomic crystal materials and devices application.
Topics and Schedule
1 Introduction (2 hours)
1.1 Basic knowledge of semiconductor materials and devices
1.2 Introduction of the development of semiconductor materials and device applications
2 Technology of preparation and characterization of semiconductor materials (4 hours)
2.1 Basic knowledge of the growth dynamics of semiconductor materials (bulk crystal growth kinetics, thin film materials epitaxial growth kinetics, nano structure materials growth kinetics)
2.2 Basic knowledge of the preparation of semiconductor materials and micro nano processing technology (single crystal growth furnace, CVD, MOCVD, MBE, HVPE, PVT, ion implantation, rapid annealing, lithography, etc.)
2.3 Basic knowledge of thesemiconductor material test technology (structure, composition and defect testing analysis: XRD, SEM, TEM, AFM, RHEED, XPS, AES, PL, EL, photoelectric performance test, Hall, RDS, stress analysis: Raman, Mapping etc.)
3 First generation element semiconductor materials (5 hours)
3.1 Preparation technology of germanium and silicon materials (germanium and silicon properties, bulk single crystal growth technology, CVD thin film epitaxy technology, ion implantation technology, lithography technology)
3.2 Application of silicon materials in microelectronic devices (transistors, IGBT)
3.3 Application of silicon materials in solar cell device (single crystal silicon, polycrystalline silicon, amorphous silicon)
3.4 Silicon based hetero structure materials and device applications (silicon based optoelectronic integrated devices)
4 Second generation III-V compound semiconductor materials (5 hours)
4.1 Preparation technology of III-V compound semiconductor materials (GaAs, InP, GaSb properties, bulk single crystal growth technology, thin film epitaxial growth technique)
4.2 III-V group compound semiconductor quantum well material and optoelectronic device application (near infrared LED, near infrared LD, mid far infrared quantum cascade laser, all optical spectrum multi junction solar cell, infrared detector)
4.3 III-V group compound semiconductor quantum dot material and optoelectronic device application (quantum dot lasers, super radiation light emitting diode device, intermediate band solar cell device)
5 The third generation wide band gap semiconductor materials (12 hours)
5.1 Silicon carbide materials and power electronics applications (SiC properties, PVT-SiC single crystal growth technology, high temperature CVD-SiC epitaxial growth technology, SiC power electronic devices)
5.2 GaN materials and devices applications (GaN properties, Ammono-GaN single crystal growth technology, HVPE-GaN single crystal growth technology, MOCVD-GaN epitaxial growth technique, GaN based microwave devices (HEMT), GaN based power electronic devices)
5.3 Aluminum nitride materials and device applications (AlN nature, PVT-AlN single crystal growth technology, HVPE-AlN single crystal growth technology, MOCVD-AlN epitaxial growth technology, AlN based optoelectronic devices,AlGaN based microwave devices, AlGaN based power electronic devices)
5.4 Indium nitride materials and device applications (InN properties, MOCVD-InN epitaxial growth technique, InGaN based full-spectrum solar cell device)
5.5 Zinc Oxide materials and device applications (ZnO properties, PVT-ZnO single crystal growth technology, MOCVD-ZnO epitaxial growth technology, ZnO based optoelectronic devices, ZnO nano piezoelectric generator device)
5.6 Diamond semiconductor materials and devices applications (diamond properties, CVD- diamond single crystal growth technology, application of diamond devices)
5.7 Cubic boron nitride materials and device applications (c-BN properties, ion beam deposition c-BN epitaxial growth technology, c-BN device applications)
6 Two dimensional atomic crystal materials (2 hours)
6.1 Graphene and device applications (graphene properties, CVD growth technology, application of graphene devices)
6.2 Molybdenum disulfide and devices applications (MoS2 nature, CVD growth technology, MoS2 device application)
6.3 Six boron nitride and device applications (h-BN properties, CVD growth technology, h-BN device applications)
Textbook
Wang Zhanguo, Zheng Youliao, et al.Progress in semiconductor materials research, Higher Education Press, 2012
References
Yang Shuren, Wang Zongchang, Wang Jing, semiconductor materials, The Science Publishing C, 2013
